Process Integration Engineer (m/f/d) - Metallization, GaN

Job description

What you will do Develop new wafer fab process modules on PECVD (dielectrics), PVD (metallization) tools. Execute major process development or integration tasks and build up product and process knowledge. Leader of small or medium size process integration or optimization projects. Sub-project leader of process development or integration tasks in complex projects. Build up and maintain knowledge (technical & procedures) and BG internal & external contacts in own field of expertise. Active member in PC&O Process improvement teams. What you will need Education in Semiconductor Device Physics or Semiconductor Technology and/or Microelectronics. Minimum experience is 3+ years depending on educational credentials. Knowledge of semiconductor devices and industrial semiconductor technology. Hands on experience in wafer fab process module developments on PECVD and or PVD equipment. Team player with a strong drive to achieve success. Fluency in German. Good level in English. Good communication skills, both verbal and in writing Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark. D&I Statement As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested. In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.