Quantum Topological Qubit Integration

Quantum Topological Qubit Integration - Principal Engineer About GlobalFoundries GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit . Introduction The Topological Qubit Integration (Principal Engineer) role is a key technical contributor within the Quantum Technology Solutions organization focused on enabling scalable topological quantum computing platforms. This position supports the integration of advanced materials, device architectures, and semiconductor process technologies required for topological qubits, bridging emerging device concepts with manufacturable semiconductor solutions. This role works closely with integration leadership and cross-functional teams to translate quantum device requirements into practical, scalable process integration schemes aligned with performance, yield, and reliability targets. Summary of Role As a Principal Engineer, this role contributes to the development and execution of semiconductor integration strategies for topological qubit systems. The engineer will focus on integrating III V materials, superconducting films, and topological device structures with semiconductor processes, including BEOL interconnect and heterogeneous integration. The position emphasizes hands-on technical execution, data-driven problem solving, and cross-functional collaboration to enable robust and scalable quantum hardware platforms. Essential Responsibilities Support integration of topological quantum devices, including III‑V heterostructures, superconducting materials, and hybrid material systems Develop and execute process integration flows across device modules, BEOL interconnect, and heterogeneous integration schemes Work with epitaxy and materials teams to ensure integration of III‑V layers, superconductors, and interfaces meets device performance requirements Contribute to integration of device architectures supporting qubit operation as well as cryogenic read-out and control circuitry Analyze device and process interactions, including defectivity, variability, contamination, and interface quality Execute DOE (Design of Experiments) and analyze electrical and physical characterization data to guide process optimization Support development of superconducting interconnect and low-loss BEOL wiring for operation at cryogenic temperatures Collaborate with device engineering to ensure alignment between device physics requirements (e.g., coherence, noise, thermal performance) and integration Participate in yield-learning activities, including root-cause analysis and corrective action implementation Contribute to definition and tracking of technical milestones, including performance, variability, and reliability metrics Work cross-functionally with process, materials, packaging, and design enablement teams to ensure successful end-to-end integration Document integration flows, assumptions, and technical learnings to support scalable development and knowledge transfer Other Responsibilities: Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs. Required Qualifications BS or MS in Electrical Engineering, Physics, Materials Science, or related field 5+ years of experience in semiconductor process or integration engineering Experience with semiconductor device physics and materials interactions Familiarity with advanced materials systems (e.g., III‑V semiconductors, superconductors, or related materials) Experience analyzing electrical or physical characterization data Strong analytical, problem-solving, and debugging skills Effective communication skills Preferred Qualifications Experience with epitaxial growth or III‑V heterostructures (e.g., MBE, MOCVD) Background in superconducting or hybrid semiconductor devices Familiarity with topological quantum devices or related research areas Experience with BEOL integration, interconnect technologies, or packaging Experience with cryogenic device behavior and measurements. Experience with DOE methodologies, yield analysis, or variability modeling Experience working in advanced R&D or emerging technology environments Expected Salary Range $85,000.00 - $146,000.00 The exact Salary will be determined based on qualifications, experience and location. If you need a reasonable accommodation for any part of the employment process, please contact us by email at and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address. An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations. GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law